电邮这篇文章 Modelling of insulating potential in ultra-thin (42 Å) silicon oxide film
- 作者: Goldman E.I.1, Chucheva G.V.1, Shusharin I.A.1
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隶属关系:
- Frayzino branch Kotelnikov Institute of Radio-engineering and Electronics of RAS
- 期: 卷 69, 编号 3 (2024)
- 页面: 253-259
- 栏目: НАНОЭЛЕКТРОНИКА
- URL: https://kazanmedjournal.ru/0033-8494/article/view/650701
- DOI: https://doi.org/10.31857/S0033849424030061
- EDN: https://elibrary.ru/JVBQXB
- ID: 650701
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详细
Based on previously conducted measurements of the tunneling current-voltage characteristics of metal-SiO2-Si (MOS) structures, modeling of the insulating potential in an ultra-thin (4.2 nm) silicon oxide film was performed. The potential in the dielectric was defined in the shape of a trapezoid, with the lateral slopes simulating transition layers and the top base representing the bulk of SiO2. The model parameters – the barrier height and the coordinates of the trapezoid's corner points – were calculated to achieve the maximum match between the experimental and theoretical voltage derivatives of the current logarithm. Common features of the insulating potential, similar to those in thinner silicon oxide films (3.7 nm), were identified: the barrier occupies up to half of the nominal volume of the dielectric gap and is shifted towards the gate electrode, with its slope towards the semiconductor substrate being much more gradual compared to the slope adjacent to the gate.
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作者简介
E. Goldman
Frayzino branch Kotelnikov Institute of Radio-engineering and Electronics of RAS
Email: gvc@ms.ire.rssi.ru
俄罗斯联邦, Vvedensky Square, 1, Fryazino, Moscow region, 141190
G. Chucheva
Frayzino branch Kotelnikov Institute of Radio-engineering and Electronics of RAS
编辑信件的主要联系方式.
Email: gvc@ms.ire.rssi.ru
俄罗斯联邦, Vvedensky Square, 1, Fryazino, Moscow region, 141190
I. Shusharin
Frayzino branch Kotelnikov Institute of Radio-engineering and Electronics of RAS
Email: gvc@ms.ire.rssi.ru
俄罗斯联邦, Vvedensky Square, 1, Fryazino, Moscow region, 141190
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