Features of nonequilibrium pinning of charge density waves in compounds HoTe3 and TmTe3

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In this paper, the similarity of glass systems with pinning in compounds with a charge density wave (CDW) TmTe3 and HoTe3 was investigated. For this purpose, the differential IVs in micro-bridge structures oriented along the sliding direction of the CDW, with a multi-stage temperature change, were studied. In such a system with a sliding CDW, the changing behavior of the threshold field during isothermal exposure was shown, with characteristic relaxation on a logarithmic time scale. A property characteristic of glass systems has been found – the memory effect, which allows us to assert the unusual glass nature of the system of pinning centers in this system.

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Sobre autores

D. Voropaev

Kotelnikov Institute of Radioengineering and Electronics of RAS; Moscow Institute of Physics and Technology (National Search University)

Autor responsável pela correspondência
Email: voropaev.dm@phystech.edu
Rússia, Mokhovaya Str., 11, build 7, Moscow, 125009; Institutskii per. 9, Dolgoprudny, Moscow Region, 141701

A. Frolov

Kotelnikov Institute of Radioengineering and Electronics of RAS

Email: voropaev.dm@phystech.edu
Rússia, Mokhovaya Str., 11, build 7, Moscow, 125009

A. Orlov

Kotelnikov Institute of Radioengineering and Electronics of RAS; Institute of Nanotechnology of Microelectronics of RAS

Email: voropaev.dm@phystech.edu
Rússia, Mokhovaya Str., 11, build 7, Moscow, 125009; Nagatinskaya Str., 16a, build. 11, Moscow, 115487

A. Sinchenko

Kotelnikov Institute of Radioengineering and Electronics of RAS

Email: voropaev.dm@phystech.edu
Rússia, Mokhovaya Str., 11, build 7, Moscow, 125009

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2. Fig. 1. Optical photograph of a thin TmTe3 crystal in transmission.

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3. Fig. 2. Optical photograph of a crystal on a substrate with gold contacts.

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4. Fig. 3. Optical photograph in transmission of a HoTe3 junction of a multi-contact bridge structure cut using FIB in two crystal directions.

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5. Fig. 4. Differential volt-ampere characteristics of a bridge with a characteristic threshold (threshold voltages Vt are indicated in the figure), due to the breakdown and sliding of the VZP, respectively, before (1) and after a time delay of 138 h (2). The curves are shifted relative to each other along the y axis.

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6. Fig. 5. Evolution of the threshold field values ​​in the TmTe3 compound: a – during isothermal holding at temperatures of 210 (1) and 220 K (2), b – plotted on a semi-logarithmic scale.

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7. Fig. 6. Memory effect in TmTe3: a – evolution of the threshold field (circles) at different holding temperatures (solid line); b – evolution of the threshold field when connecting sectors A, B and D with the same temperature of 220 K.

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