Development and research of a slow-wave system for a miniature W-band multibeam traveling wave lamp

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The results of the development of a meander-type slow-wave system (SS) with metal supports for a miniature high-power W-band traveling wave lamp (TWT) with two ribbon electron beams are presented. Using a three-dimensional finite element software package, the electrodynamic parameters of the GS were studied. A two-section model of a TWT amplifier with a discontinuity has been developed to prevent self-excitation. Three-dimensional modeling of electron-wave interaction was carried out. It was found that with a total beam current of 200 mA in linear mode, the gain exceeds 30 dB in the frequency band 95.4...97.75 GHz, and the output power in saturation mode reaches 120 W. A technology for manufacturing SS based on laser microprocessing of thin copper plates is proposed. Test samples of the SS were manufactured and verified using optical and scanning microscopy.

作者简介

R. Torgashov

Kotelnikov Institute of Radioengineering and Electronics Russian Academy of Sciences, Saratov Branch; Saratov National Research State University named by N.G.Chernyshevskiy

Email: torgashovra@gmail.com
Saratov, 410019, Russia; Saratov, 410012, Russia

D. Nozhkin

Kotelnikov Institute of Radioengineering and Electronics Russian Academy of Sciences, Saratov Branch; Saratov National Research State University named by N.G.Chernyshevskiy

Email: torgashovra@gmail.com
Saratov, 410019, Russia; Saratov, 410012, Russia

A. Starodubov

Kotelnikov Institute of Radioengineering and Electronics Russian Academy of Sciences, Saratov Branch; Saratov National Research State University named by N.G.Chernyshevskiy

Email: torgashovra@gmail.com
Saratov, 410019, Russia; Saratov, 410012, Russia

N. Ryskin

Kotelnikov Institute of Radioengineering and Electronics Russian Academy of Sciences, Saratov Branch; Saratov National Research State University named by N.G.Chernyshevskiy

编辑信件的主要联系方式.
Email: torgashovra@gmail.com
Saratov, 410019, Russia; Saratov, 410012, Russia

参考

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  6. Torgashov R.A., Rozhnev A.G., Ryskin N.M. // IEEE Trans. 2022. V. ED-69. № 3. P. 1396. https://doi.org/10.1109/TED.2022.3141337
  7. Ryskin N.M., Torgashov R.A., Starodubov A.V. et al. // J. Vac. Sci. Technol. B. 2021. V. 39. № 1. P. 013204. https://doi.org/10.1116/6.0000716
  8. Стародубов А.В., Ножкин Д.А., Расулов И.И. и др. // РЭ. 2022. Т. 67. № 10. С. 935. https://doi.org/10.31857/S0033849422100126
  9. Starodubov A.V., Serdobintsev A.A., Galkin A.G. et al. // Intern. Conf. on Actual Problems of Electron Devices Engineering (APEDE). Saratov, 24–25 Sept. 2020. N.Y.: IEEE, 2020. P. 256. https://doi.org/10.1109/APEDE48864.2020.9255610

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版权所有 © Р.А. Торгашов, Д.А. Ножкин, А.В. Стародубов, Н.М. Рыскин, 2023