Determination of constants and construction of field dependences of parameters of metal-oxide-semiconductor structures with ultrathin layers of silicon oxide based on their experimental high-frequency voltage-capacitance-characteristics

封面

如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

An algorithm has been developed for determining from experimental field dependences the high–frequency impedance of silicon structures with an ultrathin (less than 5 nm) SiO2 layer of the insulating gap capacity and concentration of dopant directly at the Si-SiO2 interface. Relations allowing to estimate marginal errors of the developed approach are obtained. The proposed method is applied to experimental characteristics of the metal–oxide–semiconductor structure with a thickness of SiO2 4.2 nm. It is shown that the developed algorithm has sufficiently high accuracy and accessibility for use in processing high-frequency measurement data.

全文:

受限制的访问

作者简介

D. Belorusov

Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences

Email: gvc@ms.ire.rssi.ru

Fryazino branch

俄罗斯联邦, Vvedensky sq. 1, Fryazino, Moscow region, 141190

E. Goldman

Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences

Email: gvc@ms.ire.rssi.ru

Fryazino branch

俄罗斯联邦, Vvedensky sq. 1, Fryazino, Moscow region, 141190

G. Chucheva

Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences

编辑信件的主要联系方式.
Email: gvc@ms.ire.rssi.ru

Fryazino branch

俄罗斯联邦, Vvedensky sq. 1, Fryazino, Moscow region, 141190

I. Shusharin

Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences

Email: gvc@ms.ire.rssi.ru

Fryazino branch

俄罗斯联邦, Vvedensky sq. 1, Fryazino, Moscow region, 141190

参考

  1. Zwanenburg F.A., Dzurak A.S., Morello A. et al. // Rev. Mod. Phys. 2013. V. 85. № 3. P. 961. doi: 10.1103/RevModPhys.85.961.
  2. Черняев М.В., Горохов С.А., Патюков С.И., Резванов А.А. // Электрон. техника. Сер. 3. Микроэлектроника. 2022. № 3. С. 31. doi: 10.7868/S2410993222030058.
  3. Muller D.A., Sorsch T., Moccio S. et al. // Nature. 1999. V. 399. № 6738. P. 758. doi: 10.1038/21602.
  4. Sze S.M., Kwok K. Ng. Physics of Semiconductor Devices. 3rd ed. N.Y.: John Willey @ Sons, 2007.
  5. Nicollian E.H., Brews I.R. MOS (Metal Oxide Semiconductor) Physics and Technology. N.Y.: John Willey @ Sons, 1982.
  6. Гольдман Е.И., Кухарская Н.Ф., Левашов С.А., Чучева Г.В. // ФТП. 2019. Т. 53. № 1. С. 46. doi: 10.21883/FTP.2019.01.46985.8802.
  7. Бонч-Бруевич В.Л., Звягин И.П., Кайпер Р. и др. Электронная теория неупорядоченных полупроводников. М.: Наука, 1981. С. 22.
  8. Шкловский Б.И., Эфрос А.Л. Физика полупроводников и полупроводниковых приборов. Электронные свойства легированных полупроводников. М.: Наука, 1979. С. 316.
  9. Барабан А.П., Булавинов В.В., Коноров П.П. Электроника слоев на кремнии. Л.: Изд-во ЛГУ, 1988.
  10. Lonnum L.F., Johannessen J.S. // Electron. Lett. 1986. V. 22. № 9. P. 456. doi: 10.1049/el:19860310
  11. Kevin J.Y., Chenming H. // IEEE Trans. 1999. V. ED-46. № 7. P. 1500. doi: 10.1109/16.772500

补充文件

附件文件
动作
1. JATS XML
下载
2. Fig. 1. High-frequency capacitance-voltage characteristics and resistance of the silicon substrate: capacitance curves 1 - 1 MHz, 2 - 0.5 MHz, 3 - . The inset shows the dependence of the substrate resistance on the field voltage, calculated using formula (13).

下载 (71KB)
索引源数据
3. Fig. 2. Dependence of the dimensionless bending of bands in a semiconductor on the field voltage.

下载 (43KB)
索引源数据
4. Fig. 3. Dependence of the total concentration of the built-in charge, charges of electron traps and minority charge carriers on the Si−SiO2 contact on the field voltage. The inset shows the Vg window, where the characteristic is closest to the ideal; curve 1 is the derivative of psq with respect to voltage, curve 2 is the derivative of ns with respect to voltage.

下载 (70KB)
索引源数据
5. Fig. 4. Dependence of the functional Ω on Cиз and near the minimum point: (solid line), (dots), (asterisks). The variable is the deviation of the capacities Cиз and from the values ​​at the minimum of the functional Ω.

下载 (84KB)
索引源数据

版权所有 © Russian Academy of Sciences, 2024