Nonlinearity of current-voltage characterustics of diamond-like carbon thin films with nikel impurity

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Abstract

The current-voltage characteristics for Pt/DLC/Pt structures based on thin (40 nm) diamond-like carbon (DLC) films with Ni impurity have been studied at room temperature. The films were synthesized in the hallow Ni-cathode discharge from the mixture of argon and propane at simultaneous deposition of the DLC and Ni. The Ni concentration (10, 20 and 40 at. %) was controlled by variation of the propane portion (reactive gas) in plasma forming gas (argon) in the range of C3H8: Ar ~ 1:(1000…7000). Nonlinearity of the conductance G dependence on transverse voltage V agrees with Frenkel–Paul model: G ∝ exp(AV1/2). Observed decrease of the ln(G) - V1/2 dependence slope with increase of the Ni content was connected with increase of the DLC(Ni) dielectric permeability. Percolation threshold corresponds to Ni concentration of ~ 20 at.%.

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About the authors

A. S. Vedeneev

Kotelnikov Institute Radioengineering and Electronics RAS

Author for correspondence.
Email: asv335@fireras.su

Fryazino Branch

Russian Federation, Vvedenskogo Squar. 1, Fryazino, Moscow region, 141190

A. M. Kozlov

Kotelnikov Institute Radioengineering and Electronics RAS

Email: asv335@fireras.su

Fryazino Branch

Russian Federation, Vvedenskogo Squar. 1, Fryazino, Moscow region, 141190

D. V. Kolodko

Kotelnikov Institute Radioengineering and Electronics RAS

Email: asv335@fireras.su

Fryazino Branch

Russian Federation, Vvedenskogo Squar. 1, Fryazino, Moscow region, 141190

V. A. Luzanov

Kotelnikov Institute Radioengineering and Electronics RAS

Email: asv335@fireras.su

Fryazino Branch

Russian Federation, Vvedenskogo Squar. 1, Fryazino, Moscow region, 141190

I. A. Sorokin

Kotelnikov Institute Radioengineering and Electronics RAS

Email: asv335@fireras.su

Fryazino Branch

Russian Federation, Vvedenskogo Squar. 1, Fryazino, Moscow region, 141190

A. S. Bugaev

Kotelnikov Institute Radioengineering and Electronics RAS; Moscow Institute of Physics and Technology (National Research University)

Email: asv335@fireras.su

Fryazino Branch

Russian Federation, Vvedenskogo Squar. 1, Fryazino, Moscow region, 141190; Institutskii Lane, 9, Dolgoprudny, Moscow region, 141700

References

  1. Robertson J. // Mater. Sci. Engineer. R: Rep. 2002. V. 4. № . 37. P. 129.
  2. Koidl P., Wild C., Dischler B. et al. // Mater. Sci. Forum. 1990. V. 52–53. P. 41.
  3. Zou J. W., Reichelt K., Schmidt K., Dischler B. // J. Appl. Phys. 1989. V. 65. № 10. P. 3914.
  4. Kaplan S., Jansen F., Machonkin M. // Appl. Phys. Lett. 1985. V. 47. № 7. P. 750.
  5. Grill A., Meyerson B. S., Patel V. V. et al. // J. Appl. Phys. 1987. V. 61. № 8. P. 2874.
  6. Иванов-Омский В.И., Толмачев А. В., Ястребов С. Г. // ФТП. 2001. Т. 35. № 2. С. 227.
  7. Jager C., Gottwald J., Spiess H. W., Newport R. J. // Phys. Rev. B. 1994. V. 50. № 2. P. 846.
  8. Dimigen H., Klages C. P. // Surf. Coat. Technol. 1991. V. 49. № 1–3. P. 543.
  9. Khurshudov A., Kato K., Daisuke S. // J. Vac. Sci. Technol. A. 1996. V. 14. № 5. P. 2935.
  10. He X. M., Hakovirta M., Nastasi M. // Mater. Lett. 2005. V. 59. № 11. P. 1417.
  11. Wei Q., Narayan R. J., Sharma A. K. et al. // J. Vac. Sci. Technol. A. 1999. V. 17. № 6. P. 3406.
  12. Damasceno J. C., Camargo S. S., Freire F. L., Carius R. // Surf. Coat. Technol. 2000. V. 133–134. P. 247.
  13. Gampp R., Gantenbein P., Kuster Y. et al. // Proc. SPIE. 1994. V. 2255. P. 92.
  14. Donnet C., Fontaine J., Grill A. et al. // Surf. Coat. Technol. 1997. V. 94–95. P. 531.
  15. Grischke M., Bewilogua K., Trojan K., Dimigen H. // Surf. Coat. Technol. 1996. V. 74–75. Pt.2. P. 739.
  16. Wei Q., Sankar J., Narayan J. // Surf. Coat. Technol. 2001. V. 146–147. P. 250.
  17. Луцев Л. В., Яковлев С. В., Сиклицкий В. И. // ФТТ. 2000. Т. 42. № . 6. С. 1105.
  18. Луцев Л. В., Звонарева Т. К., Лебедев В. М. // Письма в ЖТФ. 2001. Т. 27. № 15. С. 84.
  19. Мороз О. Ю., Наквасина Е. Ю. // Сб. трудов XII Всерос. школы-семинара “Волновые явления в неоднородных средах”. Звенигород. 24–29 мая 2010. М.: Физфак МГУ, 2010. Т. 7. С. 57.
  20. Nikolaychuk G. A., Yakovlev S. V., Moroz O. Y., Nakvasina E. Y. //13th Int. Conf. on Electromechanics, Electrotechnology, Electromaterials and Components (ICEEE – 2010). Alushta 19–25 Sept. M: MPEI, 2010. V. 4. P. 46.
  21. Николайчук Г. А., Мороз О. Ю., Дунаевский С. М. // ЖТФ. 2018. Т. 88. № 11. С. 1672.
  22. Веденеев А. С., Лузанов В. А., Рыльков В. В. // Письма в ЖЭТФ. 2019. Т. 109. № 3. С. 170.
  23. Vedeneev A. S., Luzanov V. A., Rylkov V. V. // Semiconductors. 2019. V. 53. № 14. P. 1970.
  24. Николаев С. Н., Веденеев А. С., Лузанов В. А. и др. // РЭ. 2021. Т. 66. № 10. С. 1024.
  25. Frenkel J. // Phys. Rev. 1938. V. 54. № 8. P. 647.
  26. Френкель Я. И. // ЖЭТФ. 1938. Т. 8. № 12. С. 1292.
  27. Насыров К. А., Гриценко В. А. // Успехи физ. наук. 2013. Т. 183. № 10. С. 99.
  28. Peng P., Xie D., Yang Y. et al. // J. Appl. Phys. 2012. V. 111. № 8. P. 084501.
  29. Zhuge F., Dai W., He C. L. et al. // Appl. Phys. Lett. 2010. V. 96. № 16. P. 163505.
  30. Takabayasi S., Yang M., Ogawa Sh. et al. // J. Appl. Phys. 2014. V. 116. № 9. P. 093507.
  31. Шкловский Б. И. // ФТП. 1979. Т. 13. № 1. С. 93.
  32. Шкловский Б. И., Эфрос А. Л. // Успехи физ. наук. 1975. Т. 117. № 3. С. 401.
  33. Pollak M., Hauser J. J. // Phys. Rev. Lett. 1973. V. 31. № 21. P. 1304.
  34. Райх М. Э., Рузин И. М. // Письма в ЖЭТФ. 1986. Т. 43. № 9. С. 437.
  35. Сорокин И. А., Колодко Д. В., Краснобаев К. И. //РЭ. 2020. Т. 65. № 3. С. 288.
  36. Лузанов В. А., Веденеев А. С. // РЭ. 2018. Т. 63. № 9. С. 1007.

Supplementary files

Supplementary Files
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2. Fig. 1. Dependence of the percentage content of nickel in DLC(Ni) and the film growth rate on the ratio of partial pressures of argon and propane.

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3. Fig. 2. Volt-ampere characteristics of Pt/DLC(Ni)/Pt structures with different nickel concentrations: 10 (1), 20 (2), 40 at.% (3).

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4. Fig. 3. Dependence of conductance G on |V |1/2 at different nickel concentrations: 10 (1), 20 (2), 40 at.% (3).

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5. Fig. 4. Dependence of resistance of Pt/DLC(Ni)/Pt structures on Ni content.

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