Мақаланы E-mail арқылы жіберу Influence of conditions for the formation of hafnium oxide films on the structural and electrical properties of heterostructures.
- Авторлар: Afanas'ev M.S.1, Belorusov D.A.1, Kiselyov D.A.1, Luzanov V.A.1, Chucheva G.V.1
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Мекемелер:
- Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch
- Шығарылым: Том 68, № 10 (2023)
- Беттер: 973-979
- Бөлім: НАНОЭЛЕКТРОНИКА
- URL: https://kazanmedjournal.ru/0033-8494/article/view/650450
- DOI: https://doi.org/10.31857/S0033849423100017
- EDN: https://elibrary.ru/DSVUXI
- ID: 650450
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
Hafnium oxide (HfO_2) films were synthesized onto silicon substrates by magnetron sputtering under various technological conditions. Research results presented structural composition of HfO2 films and electrical properties of heterostructures metal-insulator-semiconductor (Ni–HfO_2–Si) based on them.
Авторлар туралы
M. Afanas'ev
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch
Email: gvc@ms.ire.rssi.ru
Fryazino, Moscow oblast, 141190 Russia
D. Belorusov
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch
Email: gvc@ms.ire.rssi.ru
Fryazino, Moscow oblast, 141190 Russia
D. Kiselyov
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch
Email: gvc@ms.ire.rssi.ru
Fryazino, Moscow oblast, 141190 Russia
V. Luzanov
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch
Email: gvc@ms.ire.rssi.ru
Fryazino, Moscow oblast, 141190 Russia
G. Chucheva
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch
Хат алмасуға жауапты Автор.
Email: gvc@ms.ire.rssi.ru
Fryazino, Moscow oblast, 141190 Russia
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