Microstructural changes in magnesium alloy Mg-Zn-REE after irradiation with nanosecond laser pulses

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Abstract

The article presents the results of studies of the structure and composition of the surface and near-surface layers of the Mg–Y–Zn–Nd–Yb–Zr alloy system with a long-period phase after irradiation with nanosecond laser pulses using electron microscopy and energy-dispersive X-ray microanalysis. It is shown that in a two-phase alloy, a layer of nanocrystalline MgO with a thickness from 5 nm to hundreds of nm is formed on the surface in the α-Mg matrix region. A recrystallized layer of columnar crystallites with a thickness of about 1 μm and a lateral size of 0.2–1 μm with inclusions of cubic MgO is formed under it. In the area of the intermetallic compound (phase Mg12YZn–REE type 18R), a three-layer amorphous-crystalline structure is formed: an amorphous layer 15–20 nm thick on the surface, under it a crystalline layer of columnar crystallites 0.1–0.3 μm thick and with lateral dimensions of 0.1–0.5 μm, then an amorphous layer of intermetallic compound about 1 μm thick.

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About the authors

A. L. Vasiliev

National Research Center “Kurchatov Institute”; Togliatti State University; Moscow Institute of Physics and Technology (National Research University)

Author for correspondence.
Email: a.vasiliev56@gmail.com
Russian Federation, Moscow; Togliatti; Dolgoprudny

M. M. Krishtal

Togliatti State University

Email: a.vasiliev56@gmail.com
Russian Federation, Togliatti

Yu. V. Grigoriev

National Research Center “Kurchatov Institute”

Email: a.vasiliev56@gmail.com
Russian Federation, Moscow

A. V. Polunin

Togliatti State University

Email: a.vasiliev56@gmail.com
Russian Federation, Togliatti

A. O. Rodin

National University of Science and Technology MISIS

Email: a.vasiliev56@gmail.com
Russian Federation, Moscow

Yu. R. Kolobov

Togliatti State University; Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry of the Russian Academy of Sciences

Email: a.vasiliev56@gmail.com
Russian Federation, Togliatti; Chernogolovka, Moscow Region

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Supplementary files

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2. Fig. 1. SEM image of the sample surface (a) obtained in the backscattered electron mode and element distribution maps for Mg (b), Y (c), Zn (d), Zr (d), Nd (f), and Yb (g).

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3. Fig. 2. SEM image of a crater obtained in the secondary electron mode; the rectangle marks the region from which the lamella was prepared for TEM/STEM/EDX studies.

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4. Fig. 3. Bright-field TEM (a) and STEM images (b) of the near-surface regions A, B, and C of the sample, exhibiting different contrast, and their electron diffraction patterns (c–d). Pt(e-beam) and Pt(i-beam) are the technological Pt layers formed by electron and ion beams. The arrows indicate the supposed boundary of the layer with the Mg matrix recrystallized as a result of the laser beam action. Arrows t point to the twin, and sf – to the stacking faults.

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5. Fig. 4. Bright-field TEM image of region B.

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6. Fig. 5. HRTEM image of the inclined twin boundary (arrows t indicate the boundary outcrops on the lamella surface) and the stacking fault (sf). The insets show the two-dimensional Fourier spectra of two components of the twin.

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7. Fig. 6. The near-surface layer of region A: a – bright-field TEM image of the region with the porous structure of the crater wall; b – elemental EDX map of the distribution of Pt (blue), O (red), Mg (green); c, d – HRTEM images of the porous region, the inset is the two-dimensional Fourier spectrum with two rings corresponding to the reflections 111 and 002 MgO.

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8. Fig. 7. Bright-field TEM image of the surface and near-surface layer of the Mg–Zn–REE intermetallic compound (B and C are crystalline and amorphous regions) (a) and HRTEM image of the region highlighted by a rectangle (b), inset – two-dimensional Fourier spectra from the upper part of the image and from the lower one, corresponding to α-Mg with the zone axis [54 10]. Dark-field STEM images of the near-surface region (c, d) and EDX maps of the distribution of elements in the near-surface layer (c). Results of EDX scanning (d) along the line (g) and the corresponding scanning region (e)

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