COMPARATIVE X-RAY DIFFRACTOMETRY OF THE DEFECT STRUCTURE OF ZnO EPITAXIAL FILMS DEPOSITED BY MAGNETRON SPUTTERING ON C-PLANE Al2O3 SUBSTRATES IN INHOMOGENEOUS ELECTRIC FIELD

Yu. A. Volkovsky; Волковский Ю. А.; V. A. Zhernova; Жернова В. А.; M. S. Folomeshkin; Фоломешкин М. С.; P. A. Prosekov; Просеков П. А.; A. E. Muslimov; Муслимов А. Э.; A. V. Butashin; Буташин А. В.; A. M. Ismailov; Исмаилов А. М.; Yu/ V. Grigoriev; Григорьев Ю. В.; Yu. V. Pisarevsky; Писаревский Ю. В.; V. M. Kanevsky; Каневский В. М.

doi:10.31857/S0023476123020212

COMPARATIVE X-RAY DIFFRACTOMETRY OF THE DEFECT STRUCTURE OF ZnO EPITAXIAL FILMS DEPOSITED BY MAGNETRON SPUTTERING ON C-PLANE Al2O3 SUBSTRATES IN INHOMOGENEOUS ELECTRIC FIELD

Авторлар: Volkovsky Y.A.¹, Zhernova V.A.¹, Folomeshkin M.S.²^,3, Prosekov P.A.¹, Muslimov A.E.¹, Butashin A.V.¹, Ismailov A.M.⁴, Grigoriev Y.V.¹, Pisarevsky Y.V.¹, Kanevsky V.M.¹^,5
Мекемелер:
1. Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”Russian Academy of Sciences, Moscow, 119333 Russia
2. National Research Centre “Kurchatov Institute”, 123182, Moscow, Russia
3. Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” Russian Academy of Sciences, 119333, Moscow, Russia
4. Dagestan State University, Makhachkala, Republic of Dagestan, 36700 Russia
5. National Research Centre “Kurchatov Institute,” Moscow, 123182 Russia
Шығарылым: Том 68, № 2 (2023)
Беттер: 180-188
Бөлім: ДИФРАКЦИЯ И РАССЕЯНИЕ ИОНИЗИРУЮЩИХ ИЗЛУЧЕНИЙ
URL: https://kazanmedjournal.ru/0023-4761/article/view/673480
DOI: https://doi.org/10.31857/S0023476123020212
EDN: https://elibrary.ru/BTJWEV
ID: 673480

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Аннотация
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Әдебиет тізімі
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Статистика

Аннотация

The results of studying the specific features of the growth of zinc oxide films formed on sapphire substrates by magnetron sputtering in an inhomogeneous electric field are presented. The films have been analyzed by high-resolution X-ray diffractometry, pole figure technique, and electron microscopy. A sequence of changes in the lateral structure with an increase in the film thickness, which depends also on the local potential, is revealed. Thus, regions with a higher surface potential correspond to the ZnOá10 0ñ(0001)||Al2O3á11 0ñ(0001) epitaxial ratio with the least lattice mismatch.

Негізгі сөздер

X-RAY DIFFRACTOMETRY, ZnO EPITAXIAL FILMS, MAGNETRON SPUTTERING

Әдебиет тізімі

Izaki M., Omi T. // Appl. Phys. Lett. 1996. V. 68. № 17. P. 2439. https://doi.org/10.1063/1.116160
Kuznetsova S., Mongush E., Lisitsa K. // J. Phys.: Conf. Ser. 2019. V. 1145. № 1. P. 012020.
Laurenti M., Cauda V. // Coatings. 2018. V. 8. № 2. P. 67. https://doi.org/10.3390/coatings8020067
Exarhos G.J., Sharma S.K. // Thin Solid Films. 1995. V. 270. № 1–2. P. 27. https://doi.org/10.1016/0040-6090(95)06855-4
Bachari E.M., Baud G., Amor S.B. et al. // Thin Solid Films. 1999. V. 348. № 1–2. P. 165. https://doi.org/10.1016/s0040-6090(99)00060-7
Triboulet R., Perriere J. // Prog. Cryst. Growth Charact. Mater. 2003. V. 47. № 2–3. P. 65. https://doi.org/10.1016/j.pcrysgrow.2005.01.003
Муслимов А.Э., Асадчиков В.Е., Буташин А.В. и др. // Кристаллография. 2016. Т. 61. № 5. С. 703. https://doi.org/10.7868/S0023476116050143
Itagaki N., Kuwahara K., Matsushima K. et al. // Opt. Eng. 2014. V. 53. № 8. P. 087109. https://doi.org/10.1117/1.oe.53.8.087109
Trautnitz T., Sorgenfrei R., Fiederle M. // J. Crystal Growth. 2010. V. 312. № 4. P. 624. https://doi.org/10.1016/j.jcrysgro.2009.12.011
Du X.L., Murakami M., Iwaki H. et al. // Phys. Status Solidi. A. 2002. V. 192. № 1. P. 183. https://doi.org/10.1002/1521-396x(200207)192:1<183::aid-ssa183>3.0.co;2-k
Исмаилов А.М., Эмирасланова Л.Л., Рабаданов М.Х. и др. // Письма в ЖТФ. 2018. Т. 44. № 12. С. 52.
Фоломешкин М.С., Волковский Ю.А., Просеков П.А. и др. // Кристаллография. 2022. Т. 67. № 3. С. 317. https://doi.org/10.31857/S0023476122030079
Благов А.Е., Галиев Г.Б., Имамов Р.М. и др. // Кристаллография. 2017. Т. 62. № 3. С. 355. https://doi.org/10.7868/S002347611703002X
Bowen D.K., Tanner B.K. // CRC press, 1998.
Krost A., Bauer G., Woitok J. // Optical characterization of epitaxial semiconductor layers. Berlin, Heidelberg: Springer, 1996. P. 287. https://doi.org/10.1007/978-3-642-79678-4_6
Holy V., Pietsch U., Baumbach T. High-resolution X-ray Scattering from thin films and multilayers. 1999. V. 149. https://doi.org/10.1007/BFb0109385
Серегин А.Ю., Просеков П.А., Чуховский Ф.Н. и др. // Кристаллография. 2018. Т. 64. № 4. С. 521. https://doi.org/10.1134/S0023476119040180
https://www-s.nist.gov/srmors/view_detail.cfm?srm=676A
Birkholz M. // Thin Film Analysis by X-Ray Scattering. John Wiley Sons, 2006. P. 183.
Благов А.Е., Васильев А.Л., Дмитриев В.П. и др. // Кристаллография. 2017. Т. 62. № 5. С. 716. https://doi.org/10.7868/S0023476117050034
Nagao K., Kagami E. // Rigaku J. 2011. V. 27. № 2. P. 6.
Larbah Y., Adnane M., Sahraoui T. // Mater. Sci. Poland. 2015. V. 33. № 3. P. 491.
Kisi E.H., Elcombe M.M. // Acta Cryst. C. 1989. V. 45. № 12. P. 1867. https://doi.org/10.1107/S0108270189004269
Соловьев А.А., Сочугов Н.С., Оскомов К.В. и др. // Физика плазмы. 2009. Т. 35. № 5. С. 443.
Field D.J., Dew S.K., Burrell R.E. // J. Vac. Sci. Technol. A. 2002. V. 20. № 6. P. 2032. https://doi.org/10.1116/1.1515800