COMPARATIVE X-RAY DIFFRACTOMETRY OF THE DEFECT STRUCTURE OF ZnO EPITAXIAL FILMS DEPOSITED BY MAGNETRON SPUTTERING ON C-PLANE Al2O3 SUBSTRATES IN INHOMOGENEOUS ELECTRIC FIELD

Yu. A. Volkovsky; Волковский Ю. А.; V. A. Zhernova; Жернова В. А.; M. S. Folomeshkin; Фоломешкин М. С.; P. A. Prosekov; Просеков П. А.; A. E. Muslimov; Муслимов А. Э.; A. V. Butashin; Буташин А. В.; A. M. Ismailov; Исмаилов А. М.; Yu/ V. Grigoriev; Григорьев Ю. В.; Yu. V. Pisarevsky; Писаревский Ю. В.; V. M. Kanevsky; Каневский В. М.

doi:10.31857/S0023476123020212

COMPARATIVE X-RAY DIFFRACTOMETRY OF THE DEFECT STRUCTURE OF ZnO EPITAXIAL FILMS DEPOSITED BY MAGNETRON SPUTTERING ON C-PLANE Al2O3 SUBSTRATES IN INHOMOGENEOUS ELECTRIC FIELD

Autores: Volkovsky Y.A.¹, Zhernova V.A.¹, Folomeshkin M.S.²^,3, Prosekov P.A.¹, Muslimov A.E.¹, Butashin A.V.¹, Ismailov A.M.⁴, Grigoriev Y.V.¹, Pisarevsky Y.V.¹, Kanevsky V.M.¹^,5
Afiliações:
1. Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”Russian Academy of Sciences, Moscow, 119333 Russia
2. National Research Centre “Kurchatov Institute”, 123182, Moscow, Russia
3. Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” Russian Academy of Sciences, 119333, Moscow, Russia
4. Dagestan State University, Makhachkala, Republic of Dagestan, 36700 Russia
5. National Research Centre “Kurchatov Institute,” Moscow, 123182 Russia
Edição: Volume 68, Nº 2 (2023)
Páginas: 180-188
Seção: ДИФРАКЦИЯ И РАССЕЯНИЕ ИОНИЗИРУЮЩИХ ИЗЛУЧЕНИЙ
URL: https://kazanmedjournal.ru/0023-4761/article/view/673480
DOI: https://doi.org/10.31857/S0023476123020212
EDN: https://elibrary.ru/BTJWEV
ID: 673480

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Resumo

The results of studying the specific features of the growth of zinc oxide films formed on sapphire substrates by magnetron sputtering in an inhomogeneous electric field are presented. The films have been analyzed by high-resolution X-ray diffractometry, pole figure technique, and electron microscopy. A sequence of changes in the lateral structure with an increase in the film thickness, which depends also on the local potential, is revealed. Thus, regions with a higher surface potential correspond to the ZnOá10 0ñ(0001)||Al2O3á11 0ñ(0001) epitaxial ratio with the least lattice mismatch.

Palavras-chave

X-RAY DIFFRACTOMETRY, ZnO EPITAXIAL FILMS, MAGNETRON SPUTTERING

Bibliografia

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