Multifunctional shuttle for processing small diameter and ultra-thin semicon-ductor wafers
| Dublin Core | PKP Metadata Items | Metadata for this Document | |
| 1. | Title | Title of document | Multifunctional shuttle for processing small diameter and ultra-thin semicon-ductor wafers |
| 2. | Creator | Author's name, affiliation, country | N. A. Djuzhev; National Research University of Electronic Technology; Russian Federation |
| 2. | Creator | Author's name, affiliation, country | E. E. Gusev; National Research University of Electronic Technology; Russian Federation |
| 2. | Creator | Author's name, affiliation, country | M. Y. Fomichev; National Research University of Electronic Technology; Russian Federation |
| 2. | Creator | Author's name, affiliation, country | P. S. Ivanin; National Research University of Electronic Technology; Russian Federation |
| 2. | Creator | Author's name, affiliation, country | I. V. Kushnarev; National Research University of Electronic Technology; Russian Federation |
| 2. | Creator | Author's name, affiliation, country | V. A. Bespalov; National Research University of Electronic Technology; Russian Federation |
| 3. | Subject | Discipline(s) | |
| 3. | Subject | Keyword(s) | microassembly; 3D integration; TSV; surface relief; photolithography; DRIE; temporary bonding |
| 4. | Description | Abstract | In a first for Russia, a 100 mm diameter wafer was processed to create holes for TSV structures using automated equipment designed for 150mm diameter wafers without needing to reconfigure the installations. A shuttle wafer was developed for this purpose. The reliability of the silicon shuttle was determined through experimental studies of the mechanical strength of silicon. The thickness of the ultra-thin Si wafer that can be processed without damage in the shuttle wafer on installations with a vacuum table was calculated based on the data obtained. |
| 5. | Publisher | Organizing agency, location | The Russian Academy of Sciences |
| 6. | Contributor | Sponsor(s) |
Russian Science Foundation (24-22-00443) |
| 7. | Date | (DD-MM-YYYY) | 06.06.2025 |
| 8. | Type | Status & genre | Peer-reviewed Article |
| 8. | Type | Type | Research Article |
| 9. | Format | File format | |
| 10. | Identifier | Uniform Resource Identifier | https://kazanmedjournal.ru/1026-3519/article/view/686207 |
| 10. | Identifier | Digital Object Identifier (DOI) | 10.31857/S1026351925020041 |
| 10. | Identifier | eLIBRARY Document Number (EDN) | anapsx |
| 11. | Source | Title; vol., no. (year) | Izvestiâ Akademii nauk. Rossijskaâ akademiâ nauk. Mehanika tverdogo tela.; No 2 (2025) |
| 12. | Language | English=en | ru |
| 13. | Relation | Supp. Files |
Fig. 1. Arrangement of equipment for studying the mechanical properties of thinned plates. (262KB) Fig. 2. Schematic representation of the area of a thin silicon wafer placed in a shuttle with 3 mm diameter holes on a vacuum table. (150KB) Fig. 3. Shuttle for processing a plate with a diameter of 100 mm. (135KB) Fig. 4. Schematic representation of the shuttle with the plate being processed, placed on a vacuum table with a large suction area. (145KB) Fig. 5. Technological route for manufacturing a reusable shuttle plate. (136KB) Fig. 6. Technological route of TSV formation using a ∅150 mm shuttle plate. (144KB) Fig. 7. Shuttle plate with an ultra-thin working plate ∅100 mm, in which holes are formed. (234KB) Fig. 8. Comparison of the sizes of the formed holes with world results, where the black circle shows the result obtained in this work, and the other figures show the results of other works [19–31]. Along the x-axis – H – depth, measured in µm, along the y-axis – D – diameter, measured in µm. (227KB) |
| 14. | Coverage | Geo-spatial location, chronological period, research sample (gender, age, etc.) | |
| 15. | Rights | Copyright and permissions |
Copyright (c) 2025 Russian Academy of Sciences |