Author Details
Чалков, В. Ю.
| Issue | Section | Title | File |
| Vol 53, No 3 (2024) | INSTRUMENTATION | Development of the Ge-MDST instrument structure with an induced p-type channel | |
| Vol 54, No 4 (2025) | TECHNOLOGIES | MULTILAYER EPITAXIAL SILICON STRUCTURES WITH SUBMICRON LAYERS GROWN BY SUBLIMATION MOLECULAR BEAM EPITAXI |