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Structural features and electrical properties of si(al) thermal migration channels for high-voltage photovoltaic converters

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1. Title Title of document Structural features and electrical properties of si(al) thermal migration channels for high-voltage photovoltaic converters
2. Creator Author's name, affiliation, country A. A. Lomov; Valiev Institute of Physics and Technology of Russian Academy of Sciences; Russian Federation
2. Creator Author's name, affiliation, country B. M. Seredin; Platov South Russian State Polytechnic Institute (NPI); Russian Federation
2. Creator Author's name, affiliation, country S. Yu. Martyushov; Technological Institute for Superhard and Novel Carbon Materials; Russian Federation
2. Creator Author's name, affiliation, country A. A. Tatarintsev; Valiev Institute of Physics and Technology of Russian Academy of Sciences; Russian Federation
2. Creator Author's name, affiliation, country V. P. Popov; Platov South Russian State Polytechnic Institute (NPI); Russian Federation
2. Creator Author's name, affiliation, country A. V. Malibashev; Platov South Russian State Polytechnic Institute (NPI); Russian Federation
3. Subject Discipline(s)
3. Subject Keyword(s) thermomigration; p—n junction; silicon; aluminum; X-ray topography; X-ray rocking curve; U—I—R properties; high voltage solar module
4. Description Abstract

The results of a study of the structural features and electrical properties of Si(Al) through thermomigration p-channels in a silicon wafer are presented. Structural studies were performed using X-ray methods of projection topography, diffraction reflection curves and scanning electron microscopy. It is shown that the channel-matrix interface is coherent without the formation of mismatch dislocations. The possibility of using an array of thermomigration p-channels of 15 elements to form a monolithic photovoltaic solar module in a Si(111) silicon wafer based on p-channels with a width of 100 microns with walls in the plane is shown. The monolithic solar module has a conversion efficiency of 13.1%, an idle voltage of 8.5 V and a short-circuit current density of 33 mA/cm².

5. Publisher Organizing agency, location The Russian Academy of Sciences
6. Contributor Sponsor(s) The work was supported by the Ministry of Education and Science of the Russian Federation within the framework of the state assignment to the South-Russian State Polytechnical University (NPI) named after M.I. Platov on the topic FENN-2023-0005 and with partial support of the State assignment to the K.A. Valiev Institute of Physics and Technology of the Russian Academy of Sciences on the topic No. FFNN-2022-0019. Part of the experimental work was carried out with the instrumental support of the Center for Shared Use “Research of Nanostructured, Carbon and Superhard Materials” of the Federal State Budgetary Scientific Institution TISNCM.
7. Date (DD-MM-YYYY) 31.08.2024
8. Type Status & genre Peer-reviewed Article
8. Type Type Research Article
9. Format File format
10. Identifier Uniform Resource Identifier https://kazanmedjournal.ru/0544-1269/article/view/655229
10. Identifier Digital Object Identifier (DOI) 10.31857/S0544126924020018
11. Source Title; vol., no. (year) Mikroèlektronika; Vol 53, No 2 (2024)
12. Language English=en ru
13. Relation Supp. Files Fig. 1. Fragment of the diagram of the sample plate Si(111) with p-channels Si(Al) (a) and contact locations for measuring the electrical U-I-R parameters of the p-n junction (b), where h is the plate thickness; L is the distance between the channels; l is the channel width; x = 0 is the position of the channel center on the plate surface. (142KB)
Fig. 2. Schematic diagram of a monolithic solar module consisting of several elements: 1 — initial silicon wafer; 2 — p-channel Si(Al) (ThM process); 3 — working p—n-junction; 4 — separating groove; 5 — Ag shunt; 6 — p-layer Si(B) (solid-state deep diffusion). (101KB)
Fig. 3. Fragments of SEM images (a, b) and a micrograph (c) of the same section of the Si(111) surface (a, c) and a cleavage (b) of the thermomigration p-channel of Si(Al), oriented on the wafer surface along the 112 direction (428KB)
Fig. 4. Fragments of SEM images of the rear surface of Si(111) (a) and a cleavage (b) of two adjacent thermomigration channels of Si(Al), oriented along the |112| and |110| directions. (247KB)
Fig. 5. Fragments of projection topograms with an array of through vertical Si(Al) ThM channels formed along the direction of the Si(111) plate. Reflections: g || (440) (a), (b) and g || (224) (c). AgKα₁ radiation. (376KB)
Fig. 6. Diffraction transmission curves of 220 reflection in the region of the ThM channel of Si(Al) in the matrix Si(111) depending on the position of the X-ray beam relative to the channel center: x = 350 (1), 50 (2), 0 (3), –50 μm (4). Radiation λ = 0.070931 nm. (92KB)
Fig. 7. Inverse characteristics I(U) (1, 2) for individual n-p-n structures (see Fig. 1, b) of the sample and the model curve I(U) (3) for an n-type silicon wafer (P, 10¹⁴ cm⁻³) (a); metallurgical micrograph of the SiAl channel (b); G is the direction of the temperature gradient during thermomigration. (164KB)
Fig. 8. I(U) characteristics of the AC (1) and BC (2) p-n junctions at the p-channel boundary (see Fig. 1, b). Solid lines (3), (4) represent the simulation of an abrupt p-n junction for n-type Si (ρ = 45 Ohm×cm with α = 1.54 and α = 1, respectively (a); temperature dependences of the resistance R on the width l of the Si(Al) channel for T = 1300 K (5), 1350 K (6), and 1400 K (7) (b). (164KB)
Fig. 9. J-U (a) and Pd-U (b) characteristics for monolithic MHSM solar modules with a radiation power of 1000 W/m². In both figures: 1 - reference module #A; 2 - defective module #B. (101KB)
Fig. 10. Short-circuit density Jsc (a), open-circuit voltage Uoc (b) and efficiency Eff (c) for the i-th solar cell of module #B (radiant power 1000 W/m², Tsc = 25°C). (162KB)
Fig. 11. Fragments of the X-ray projection of the Lang topogram of a 15-element MSCM module (see Fig. 2) with perfect (a) and defective (b) solar cells: Sh₂₃, Sh₈₉ — Ag shunts between channels on the back side of the module; 1, 2 — working p—n junction; 3 — boundary of Ag shunts; 4 — left boundary of the dividing groove; nᵢ — p-channel number. Reflection – 224, emission — МоКα₁. (215KB)
14. Coverage Geo-spatial location, chronological period, research sample (gender, age, etc.)
15. Rights Copyright and permissions Copyright (c) 2024 Russian Academy of Sciences